A team of scientists from MIT found that cubic boron arsenide has better properties than traditional silicon for making microcircuits. In the course of research work, experts found that this compound is 10 times more efficient at conducting heat, electrons and ions.
MIT Principal Professor of Mechanical Engineering Gan Chen called cubic boron arsenide c-BAs an exceptional material for semiconductor manufacturing. Compared to silicon with a thermal conductivity of 148 W/mK, boron arsenide with its 1200 W/mK dissipates heat 10 times more efficiently. With such an indicator of thermal conductivity, even copper used in cooling systems, whose parameter is 401 W / mK, cannot compete.
The introduction of the above substance into semiconductor components for mass-produced gadgets may take more than a dozen years, and it is not clear whether it can even function. Nevertheless, this connection can help developers reach a new level in the creation of microcircuits, which in the future can become better, faster and more capacious.
MIT Principal Professor of Mechanical Engineering Gan Chen called cubic boron arsenide c-BAs an exceptional material for semiconductor manufacturing. Compared to silicon with a thermal conductivity of 148 W/mK, boron arsenide with its 1200 W/mK dissipates heat 10 times more efficiently. With such an indicator of thermal conductivity, even copper used in cooling systems, whose parameter is 401 W / mK, cannot compete.
The introduction of the above substance into semiconductor components for mass-produced gadgets may take more than a dozen years, and it is not clear whether it can even function. Nevertheless, this connection can help developers reach a new level in the creation of microcircuits, which in the future can become better, faster and more capacious.
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